Method and Apparatus of an Input Resistance of a Passive Mixer to Broaden the Input Matching Bandwidth of a Common Source/Gate LNA

ABSTRACT

A common-source Low Noise Amplifier (LNA) comprises a first spiral inductor coupled to a source of a first transistor, a second spiral inductor coupled to a drain of a second transistor, and a third inductor connecting the first transistor to the second transistor. The third inductor is configurable to enable a first capacitance to be coupled in parallel to form a bandpass filter. The first spiral inductor is configurable to enable a second capacitance to be coupled in parallel to form a resonant circuit. A variation of the LNA further includes a drain of a third transistor coupled to a gate of a fourth transistor with a first width, a source of the third transistor coupled to the resonant circuit, and an oscillator clock configured to operate at a first frequency that enables the third transistor, wherein the third transistor presents a first impedance to the resonant circuit, causing the resonant circuit to have a first bandwidth.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.15/357,566, filed Nov. 21, 2016, entitled, “Method and Apparatus of anInput Resistance of a Passive Mixer to Broaden the Input MatchingBandwidth of a Common Source-Gate LNA,” which is a continuation of U.S.application Ser. No. 15/016,714, filed Feb. 5, 2016, entitled, “Methodand Apparatus of an Input Resistance of a Passive Mixer to Broaden theInput Matching Bandwidth of a Common Source-Gate LNA,” now U.S. Pat. No.9,503,032, which is a continuation of U.S. application Ser. No.14/108,312, filed Dec. 16, 2013, entitled, “Method and Apparatus of anInput Resistance of a Passive Mixer to Broaden the Input MatchingBandwidth of a Common Source-Gate LNA,” now U.S. Pat. No. 9,287,836,which is a continuation of U.S. application Ser. No. 13/312,806, filedDec. 6, 2011, entitled, “Method and Apparatus of an Input Resistance ofa Passive Mixer to Broaden the Input Matching Bandwidth of a CommonSource/Gate LNA,” now U.S. Pat. No. 8,626,106, which is related to U.S.application Ser. No. 13/312,820, entitled, “An Injection Locked Dividerwith Injection Point Located at a Tapped Inductor” filed on Dec. 6,2011, which was invented by the same inventor as the presentapplication, each of the above-referenced applications incorporatedherein by reference in its entirety.

BACKGROUND OF THE INVENTION

The Federal Communications Commission (FCC) has allotted a spectrum ofbandwidth in the 60 GHz frequency range (57 to 64 GHz). The WirelessGigabit Alliance (WiGig) is targeting the standardization of thisfrequency band that will support data transmission rates up to 7 Gbps.Integrated circuits, formed in semiconductor die, offer high frequencyoperation in this millimeter wavelength range of frequencies. Some ofthese integrated circuits utilize Complementary Metal OxideSemiconductor (CMOS), Silicon-Germanium (SiGe) or GaAs (GalliumArsenide) technology to form the dice in these designs. At 60 GHz, theinterface issues between the LNA and the mixer are presented.

CMOS (Complementary Metal Oxide Semiconductor) is the primary technologyused to construct integrated circuits. N-channel devices and P-channeldevices (MOS device) are used in this technology which uses fine linetechnology to consistently reduce the channel length of the MOS devices.Current channel lengths are 40 nm, the power supply of VDD equals 1.2Vand the number of layers of metal levels can be 8 or more.

Cost is a driving force in electronic products. Integration of circuithas allowed many more devices into the die. In addition, massivecomputation is typically requires when operating wireless systems. Thishas forced analog designers to introduce their circuit techniques into 8layer metal CMOS processes more geared for digital logic manipulationrather than analog functions. The design of high speed analog circuits(60 GHz) in the 8 layer 40 nm CMOS process is a difficult task thatrequires innovation, careful design and analysis.

Conventional techniques in high frequency circuit design canunnecessarily waste energy. Any technology being pushed to the limit, asin the design of 60 GHz receiver frond-ends that includes an LNA (LowNoise Amplifier) and mixer, makes these energy losses more pronounced.These losses influence target objectives and can cause the chip or dieto fail meeting the specifications. New circuit techniques are requiredto reduce these energy losses and allow the circuit to achieve 60 Ghzoperation in the WiGig specification.

BRIEF SUMMARY OF THE INVENTION

Various embodiments and aspects of the inventions will be described withreference to details discussed below, and the accompanying drawings willillustrate the various embodiments. The following description anddrawings are illustrative of the invention and are not to be construedas limiting the invention. Numerous specific details are described toprovide a thorough understanding of various embodiments of the presentinvention. However, in certain instances, well-known or conventionaldetails are not described in order to provide a concise discussion ofembodiments of the present inventions.

One of the embodiments of the disclosure is a common source LNAinterfacing to a mixer where the mixer responds to input current signalsgenerated by the output of the LNA. An output signal spectrum isdeveloped across the resonant circuit load of the LNA and is coupled toa mixer. The signal spectrum of the input signal is amplified andgenerates an output signal spectrum that is carried within the currentsignals being applied to the mixer. The voltage output of the LNA's loadis translated to a current output that is applied to the input of themixer. These input current signals apply the energy associated with thecurrent directly into the mixer to minimize the overall powerdissipation.

Another embodiment uses a series peaking inductor coupling the cascodedevices of the LNA together. The area occupied by the inductors areorders of magnitude larger that the area occupied by the devices in theLNA. A device represents a CMOS transistor where the transistor can beeither P or N-type channel transistor. In addition, the physicaldisplacement between the upper cascode device and the lower cascodedevice of the LNA can be quite large. A series peaking inductor formedfrom a wide metal layer is used to couple the drain of the lower cascodedevice to the source of the upper cascode device. A capacitance can beadded to the wide trace of the inductor to form a bandpass filter inorder to pass those frequencies of interest.

Another embodiment of the invention is the adjustment of the width ofthe top cascode device with respect to the width of the bottom inputdevice in the cascode LNA to adjust the optimum (NF) Noise Figure andthe center frequency of the resonant circuit to the desired frequency ofoperation. The NF can be further improved 0.16 dB by reducing the widthof the upper cascode device below the width of the lower cascode device.In addition, the center carrier frequency of the LNA is decreased.

An additional embodiment uses the impedance of the mixer to reduce the Q(or quality factor) of the resonant circuit. By reducing the Q, thebandwidth of the receiver is increased. The adjustment of the width ofthe top cascode device and the load of the impedance of the mixerreduces the Q and eliminates the need for either a capacitive orresistive array to perform this function thereby reducing theintroduction of unnecessary parasitic elements. This allows the receiverto meet the requirements for the WiGig initiative at a reduced power.

BRIEF DESCRIPTION OF THE DRAWINGS

Please note that the drawings shown in this specification may notnecessarily be drawn to scale and the relative dimensions of variouselements in the diagrams are depicted schematically. The inventionspresented here may be embodied in many different forms and should not beconstrued as limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be through andcomplete, and will fully convey the scope of the invention to thoseskilled in the art. In other instances, well-known structures andfunctions have not been shown or described in detail to avoidunnecessarily obscuring the description of the embodiment of theinvention. Like identifiers or numbers refer to like elements in thediagrams.

FIG. 1a depicts a common source device stage in accordance with thepresent invention.

FIG. 1b shows a high frequency model of the common source MOS device inaccordance with the present invention.

FIG. 2a illustrates a common gate device stage in accordance with thepresent invention.

FIG. 2b shows a high frequency model of the common gate MOS device inaccordance with the present invention.

FIG. 3a presents a common source device stage with a cascode structurein accordance with the present invention.

FIG. 3b shows a common gate device stage with a cascode structure inaccordance with the present invention.

FIG. 3c presents a block diagram of the LNA in accordance with thepresent invention.

FIG. 4a illustrates a common source device stage with a cascodestructure using a peaking inductor in accordance with the presentinvention.

FIG. 4b shows a common gate device stage with a cascode structure usinga peaking inductor in accordance with the present invention.

FIG. 4c depicts a common source device stage with a cascode structureusing a peaking inductor and a switched resistive array to adjust thebandwidth of the resonant circuit in accordance with the presentinvention.

FIG. 4d presents a common gate device stage with a cascode structureusing a peaking inductor and a switched resistive array to adjust thebandwidth of the resonant circuit in accordance with the presentinvention.

FIG. 4e depicts a common source device stage with a cascode structureusing a peaking inductor and a switched capacitive array to adjust thecenter frequency of the resonant circuit in accordance with the presentinvention.

FIG. 4f shows a common gate device stage with a cascode structure usinga peaking inductor and a switched capacitive array to adjust the centerfrequency of the resonant circuit in accordance with the presentinvention.

FIG. 5a presents the graphical results of the Noise Figure of an LNA fortwo different width ratios of the upper cascode device to the lowercascode device versus frequency of WCS (Worst Case Slow) operation inaccordance with the present invention.

FIG. 5b illustrates the graphical results of the Noise Figure of an LNAfor two different widths of the upper cascode device to the lowercascode device versus frequency of BCF (Best Case Fast) operation inaccordance with the present invention.

FIG. 5c presents the graphical results of the forward gain of an LNA fortwo different widths of the upper cascode device to the lower cascodedevice versus frequency of WCS (Worst Case Slow) operation in accordancewith the present invention.

FIG. 5d illustrates the graphical results of the forward gain of an LNAfor two different widths of the upper cascode device to the lowercascode device versus frequency of BCF (Best Case Fast) operation inaccordance with the present invention.

FIG. 6a shows a portion of a conventional Gilbert mixer.

FIG. 6b illustrates a block diagram of the LNA, Quadrature oscillatorand I and Q mixers in accordance with the present invention.

FIG. 7a presents the circuit of the LNA, Quadrature oscillator outputsand I and Q mixers in accordance with the present invention.

FIG. 7b depicts the measured gain response of the common source LNA,Quadrature oscillator outputs and I and Q mixers in accordance with thepresent invention.

FIG. 8a illustrates the physical layout of the inductors and devices inthe LNA in accordance with the present invention.

FIG. 8b illustrates the cross sectional view along A-A′ in FIG. 8a inaccordance with the present invention.

FIG. 8c presents a via stack in the CMOS process in accordance with thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

The inventions presented in this specification can be used in varioushigh frequency system designs. Some of the basic circuits for an analogamplifier include the common source and common gate structures asillustrated in FIG. 1a and FIG. 2a , respectively. The common sourceconfiguration of a LNA (Low Noise Amplifier) in FIG. 1a illustrates avoltage source 1-2, a voltage in series with a resistor, that canrepresent the output of an antenna or another source of an extractedsignals. The output 1-1 of the voltage source 1-2 couples to the inputof the gate of M₁ by the gate inductance L₁. The voltage source 1-2provides the input frequency spectrum to the receiver. The source of M₁is coupled to ground by the inductor L₂. At DC, the impedance of theinductor L₂ is zero causing the source of M₁ to be coupled to ground(GRD or VSS). This configuration is known as the common source. Thedrain of device M₁ is coupled to VDD by a load 1-3, in this case, theinductor L₃ and the output out₁ is provided at the drain of M₁.

A small signal model of the common source is provided in FIG. 1b . Thegate (g), source (s) and drain (d) of the device are labeled. Betweenthe gate and source is the gate to source capacitance C_(gs). A currentsource g_(m)V_(gs) between the source and drain is controlled by thevoltage between the gate and source V_(gs). The input is applied at 1-1while the output is provided at out₁. The voltage source and anyparasitic resistances (for example, the resistance of the inductors) andseveral of the capacitances known in the art (i.e. C_(gd)) are notillustrated to simply the diagram. Finally, the load on the drain of thedevice is the parallel combination of the capacitance, C₁, at the drainand the inductance L₃ which is a resonant circuit 1-4. The resistance,not illustrated, is in parallel with the capacitance and inductancecompleting the parallel RLC tank circuit or resonant circuit of the LNA.The load or resonant circuit for the remaining cases of the LNA's aresimilar and will generally not be explicitly shown.

The common gate configuration of a LNA in FIG. 2a illustrates a voltagesource 1-2, a voltage in series with a resistor, that can represent theoutput of an antenna or another source of an extracted signal alsocalled the input signal spectrum. The voltage source 1-2 couples to thesource 2-1 of M₂. The source is coupled to ground by the inductor L₅.The gate of M₂ is coupled to an AC ground by the capacitor C₂ and to thepower supply VDD by the inductor L₄. At DC, the impedance of theinductor L₄ is zero causing the gate of M₂ to be coupled to a powersupply (VDD). In general, the inductance of L₄ can be minimized, and insome cases, the inductor L₄ can be replaced by a short. Theconfiguration in FIG. 2a is known as the common gate. The drain ofdevice M₂ is coupled to VDD by the inductor L₆. The output of thecircuit is available at out₂.

A small signal model of the common gate is provided in FIG. 2b . Thegate (g), source (s) and drain (d) of the device are labeled. The inputis applied at 2-1 while the output is provided at out₂. Between the gateand source is the gate to source capacitance C_(gs). A current sourceg_(m)V_(gs) between the source and drain is controlled by the voltagebetween the gate and source V_(gs). The inductor L₅ is between thesource and ground. The voltage source and any parasitic resistances (forexample, the resistance of the inductors) and several of thecapacitances known in the art (i.e. C_(gd)) are not illustrated tosimply the diagram. Finally, the load on the drain of the device is theparallel combination of the capacitance, C₃, at the drain and theinductance L₆. FIG. 2b illustrates that the current gain of the commongate approaches one.

FIG. 3a presents a cascode common gate structure. The cascode structurecomprises the two stacked devices, M₄ and M₃, and couples to VSS and VDDthrough the inductors, L₈ and L₉. Typically, these inductors can occupyan area 50 um on a side while the devices can be incorporated into anarea of Sum on a side. The area occupied by these inductors compared tothe area occupied by the devices can be two orders of magnitude larger.This illustrates that the placement of the inductors play a veryimportant role in determining just how close the devices in the cascodestructure can be placed next to one another. The input is applied at in₃through the inductor L₇ to the gate of M₄ while the output is providedat out₃. Quite often, the two devices of the cascode cannot be placednext to each other. Thus, a metal interconnect may be required to couplethe drain of M₄ to the source of M₃. This interconnect is represented bythe resistance R₃. This resistance introduces losses and can decreasethe gain of the circuit.

In FIG. 3a , the cascode structure provides several advantagesincluding; better isolation between input and output nodes, a highoutput impedance, and a higher bandwidth. A current mirror is formed bydevices M_(b1) and M₄ controlled by I_(bias1). The resistor R₁ acts as alow pass filter to stabilize the voltage from the diode connected deviceM_(b1) and applies the voltage to the gate of device M₄. The device M₄is configured in a common source configuration while the device M₃ is ina common gate configuration. The voltage at node 3-1 is nearly constantreducing the miller feedback capacitance for the device M₄. Because themiller capacitance is reduced in this circuit, the cascode configurationallows a higher bandwidth.

FIG. 3b presents a cascode common gate structure. The cascode structurecomprises the two stacked devices, M₆ and M₅, and couples to VSS and VDDthrough the inductors, L₁₁ and L₁₂. A current mirror is formed bydevices M_(b2) and M₆ controlled by I_(bias2). The resistor R₂ acts as alow pass filter to stabilize the voltage from the diode connected deviceM_(b2) and applies the voltage to the gate of device M₆. As mentionedearlier, the placement of the inductors play a very important role indetermining just how close these devices in the cascode structure can beplaced next to one another. Quite often, these devices cannot be placednext to each other. Thus, a metal interconnect, modeled by the resistorR₄, couples the drain of M₆ to the source of M₅. This interconnect isrepresented by the resistance R₄.

In FIG. 3b , the input is applied at in₄ through the inductor L₁₀ to thesource of M₆ while the output is provided at out₄. In general, theinductance of L₁₀ can be minimized, and in some cases, the inductor L₁₀can be replaced by a short. The cascode structure provides severaladvantages including; better isolation between input and output nodes, ahigh output impedance, and a higher bandwidth. The device M₆ isconfigured as a common gate while the device M₃ is also in a common gateconfiguration. This circuit can provide a current gain approaching one.

FIG. 3c illustrates the block diagram of the LNA. A signal “from asource” that could be an antenna, the electrical output of a fibernetwork, or a very weak signal is amplified by the LNA and provided atits output out. The LNA is optimized to keep the noise figure low whilealso providing a gain to the weak signal.

FIG. 4a presents a second cascode common source structure. The cascodestructure comprises the two stacked devices, M₈ and M₇, and couples toVSS and VDD through the inductors, L₁₃ and L₁₅. A current mirror isformed by devices M_(b3) and M₈ controlled by I_(bias3) and applied tothe gate of device M₈. The resistor R₅ acts as a low pass filter tostabilize the voltage from the diode connected device M_(b3). The areaoccupied by the inductors can be two orders of magnitude larger than thearea occupied by the devices. Often these two devices cannot be placednext to each other. Thus, a metal interconnect is used to couple thedrain of M₈ to the source of M₇. This interconnect, if modeled as aresistor, can decrease the gain of the circuit. By increasing the widthof this metallic interconnect, the resistance is decreased at theexpense of increased capacitance. However, another feature of thisinterconnect becomes more prominent: its self-inductance, L₁₆. Thus,FIG. 4a illustrates the substitution of the resistor model of R₃ in FIG.3a by the inductor L₁₆. This inductance can now be used as a peakinginductor which resonates with the corresponding capacitance of theinterconnect and devices loading this interconnect. The function of thepeaking inductor and capacitive load forms a band-pass filter which isadjusted to operate at 60 GHz. Thus, although the placement of the twocascode devices are displaced from one another on the die, the peakinginductor can minimize the loss of the resistive component in theinterconnect between the cascode devices and provide a band-passfunction.

In FIG. 4a , the input is applied at in₅ and arrives at the gate of M₈through the inductor L₁₄ while the output is provided at out₅. Ingeneral, the inductance of L₁₄ can be minimized, and in some casesdepending on the layout, the inductor L₁₄ can be replaced by a short. Acurrent mirror is formed by devices M_(b3) and M₈ controlled byI_(bias3). The cascode structure provides several advantages including;better isolation between input and output nodes, a high outputimpedance, and a higher bandwidth. The device M₈ is configured as acommon source while the device M₇ is in a common gate configuration.

FIG. 4b presents a cascode common gate structure. The cascode structurecomprises the two stacked devices, M₁₀ and M₉, and couples to VSS andVDD through the inductors, L₁₇ and L₁₉. A current mirror is formed bydevices M_(b4) and M₁₀ controlled by I_(bias4). The resistor R₆ acts asa low pass filter to stabilize the voltage from the diode connecteddevice M_(b4). As mentioned earlier, the placement of the inductors playa very important role in determining just how close these devices in thecascode structure can be placed next to one another. Quite often, thesedevices cannot be placed next to each other. The interconnect, ifmodeled as a resistor, can decrease the gain of the circuit. Byincreasing the width of this metallic interconnect, the resistance isdecreased at the expense of increased capacitance. However, as before,another feature of this interconnect becomes more prominent: itsself-inductance, L₂₀. Thus, a metal interconnect, previously modeled asa resistor R₄ in FIG. 3b , is now modeled as the inductor L₂₀. Thisinductance can now be used as a peaking inductor which resonates withthe corresponding capacitance of the interconnect and devices loadingthis interconnect. Thus, although the placement of the two cascodedevices are displaced from one another on the die, the peaking inductorcan minimize the loss of the resistive component in the interconnectbetween the cascode devices and provide a band-pass function that can beadjusted to operate at 60 GHz.

In FIG. 4b , the input is applied at in₆ and arrives at the source ofM₁₀ through the inductor L₁₈ while the output is provided at out₆. Ingeneral, the inductance of L₁₈ can be minimized, and in some casesdepending on the layout, the inductor L₁₈ can be replaced by a short. Acurrent mirror is formed by devices M_(b4) and M₁₀ controlled byI_(bias4). The cascode structure provides several advantages including;better isolation between input and output nodes, a high outputimpedance, and a higher bandwidth. The device M₁₀ is configured as acommon gate while the device M₉ is also in a common gate configuration.

Ideally, the LNA would like to pass all frequencies equally over thetargeted spectrum range from 57 Ghz to 64 GHz and block all otherfrequencies. However this condition is very difficult to achieve.Typically, a resonant circuit (comprising an inductor, capacitor andresistance) is also known as an RLC tuned circuit. The response of aresonant circuit is measured near the center frequency ω_(c) of the RLCresonant circuit. The bandwidth B is given as B=(ω_(c))/Q. The term Q isknown as the quality factor.

As Q is decreased, the bandwidth of the resonant circuit increases whilethe gain decreases. This allows a resonant circuit to be adjusted so thebandwidth covers the desired spectrum range and the LNA can amplify anysignal within the bandwidth, but the gain of the LNA has been decreasedwhile the noise increased. On the other hand, as Q is increased, thebandwidth of the resonant circuit decreases while the gain increases.This creates a very selective bandpass circuit where only a portion ofthe desired spectrum would be captured.

The resistance R in the parallel RLC resonant circuit can control thevalue of Q according to the relation

$Q = {R{\sqrt{\frac{C}{L}}.}}$

The parasitic portion of R in FIG. 4c is given by R_(a) plus any dynamicresistance that are switched into the resonant circuit while theparasitic capacitance C is given by C_(a). As the R decreases, Qdecreases. A resistive array formed by R₇ and R₈ can be switched intothe RLC resonant circuit by enabling switches S₁ and S₂ (as shown by thearrows) to provide a dynamic resistance adjustment to the RLC resonantcircuit in FIG. 4c . The switch S₁ or S₂ can be an MOS device that isenabled (to provide a path) and can couple the resistance of R₇ or R₈into the parallel RLC resonant circuit. When the resistive array isenabled to place either or both R₇ or R₈ in parallel with R_(a), theresistance of the resonant circuit decreases and decreases the Q therebyincreasing the bandwidth.

The common gate cascade LNA is illustrated in FIG. 4d . The parasiticcapacitance C of the parallel RLC resonant circuit is given by C_(b).The parasitic portion of R is given by R_(b) in parallel with the twoenabled switches S₃ and S₄ coupling R₉ or R₁₀ into the resonant circuit.The switches S₃ and S₄ become disabled (as shown by the arrows) toprovide a dynamic resistance adjustment to the RLC resonant circuit inFIG. 4d . The resistors R₉ and R₁₀ are removed from being in in parallelwith R_(b) causing the R in the RLC resonant circuit to increase. As theR increases, Q increases causing the bandwidth of the resonant circuitto decrease. Although only two resistors with two switches have beenshow, the number of switches and resistors can greater than two. In somecases, the resistance of the MOS devices forming the switches canprovide the resistance while, in addition, the weight of the resistorscan be binary weighted in value.

The capacitance C in the RLC resonant circuit can control the value ofω_(c), if R is very small or can be neglected, according to the relation

$\omega_{c} = {1/{\sqrt{LC}\;.}}$

Increasing C, decreases ω_(c) and vice versa. A capacitor array formedby C₄ and C₅ can be switched into the parallel RLC resonant circuit byenabling switches S₅ and S₆ (as shown by the arrows) to provide adynamic capacitance adjustment to the RLC resonant circuit in FIG. 4e .The parasitic portion of C the RLC resonant circuit is given by C_(a)while the resistance R is given by the parasitic values R_(a). Thecapacitive switching array of the common source in FIG. 4e is providedby the two disabled switches S₅ and S₆ that can be enabled to placeeither or both C₄ or C₅ in parallel with C_(a) causing C to increasewhich decreases the ω_(c) The center frequency is then shifted to lowerfrequencies.

The common gate cascade LNA is illustrated in FIG. 4f . The capacitiveswitching array of the common gate is provided by the two enabledswitches S₇ and S₈ that can be disabled (as shown by the arrows) toremove either or both C₆ or C₇ from being in in parallel with C_(b)causing the C in the RLC resonant circuit to decrease which increasesthe ω_(c). The center frequency is shifted to higher frequencies.Although only two capacitors with two switches have been show, thenumber of switches and capacitors can be varied while the weight of thecapacitors can be binary weighted in value. Inserting/removing thecapacitors by switch enablement/disablement provides the dynamic portionof the C in the RLC resonant circuit in FIG. 4e (common source) and FIG.4f (common gate). Similar elements that have been identified with thesame label in FIG. 4a , FIG. 4c and FIG. 4e are similar components whilethose with the same label in FIG. 4b , FIG. 4d and FIG. 4f are similarcomponents.

The capacitive arrays occupy an area which introduces undesiredcapacitance into the network. The parasitic capacitances of the arrayelements introduces a dynamic capacitance C_(d) that can be comparableto the parasitic capacitance C_(a) of the resonant circuit causing thecenter frequency ω_(c)=1/√(L(C_(a)+C_(d))) to be controlled by the bothterms C_(d) and C_(a). This additional dynamic capacitance can preventthe LNA from reaching the target frequency of 60 GHz. Similarly, theresistive arrays also introduce undesired parasitic capacitances becauseof their physical layout in the die. Thus, this parasitic capacitanceintroduced by the use of either the resistive or capacitive array makesthe tuning or adjusting of the bandwidth and center frequency of the RLCresonant circuit more difficult for the WiGig bandwidth. The additionaldynamic capacitance introduced into the parallel resonant circuit willmake it more difficult for the circuit to operate at 60 GHz. A differentinventive approach of adjusting the bandwidth and center frequency willbe required.

One inventive approach in an attempt to overcome this barrier is toremove the capacitive array in FIG. 4e and the resistive array in FIG.4c altogether thereby eliminating the additional dynamic capacitance oftheir layout. The requirement to adjust the bandwidth and centerfrequency of the RLC resonant circuit will be adjusted using twoinnovative embodiments.

The first innovative adjustment involves sizing the width of the uppercascade device while maintaining the lower cascade device at the samewidth. This adjustment of the upper cascade transistor width causes thecenter frequency of the parallel resonant RLC circuit to shift. As thewidth of the upper cascade device is decreased relative to the lowercascade device, the center frequency of the parallel resonant RLCcircuit decreases.

The second innovative adjustment involves coupling the resonant circuitof the LNA to a switched capacitance circuit. The switched capacitorincludes a switch whose gate is driven by a clock and where the switchdrives a capacitive load. This switched capacitor circuit includes amixer switch (MOS device) and capacitive load of the differentialamplifier. The switched capacitor circuit places a resistance across theresonant circuit and is given by R=1/(Cf_(Θ)) where C is the capacitivegate load of the differential amplifier and f_(Θ) is the clock frequencyof the quadrature oscillator. This resistive component can be used toadjust the Q or bandwidth of the parallel resonant RLC circuit of theLNA.

Then, in FIG. 4e , assuming that the capacitive array of C₄ and C₅ isremoved, the width of the M₇ device can be adjusted with respect to theM₈ device to adjust the center frequency. The resistance of the switchedcapacitor can be used to adjust the Q or bandwidth of the parallelresonant RLC circuit. These size changes and adjustments are made finalusing simulation results to cover all process, temperature and voltagevariations. After final layout and die fabrication, the operation ofthis inventive circuit technique has been confirmed by actualmeasurement.

The results of decreasing the channel width of M₇ with a parasiticcapacitive load are provided in FIGS. 5a-d . The upper cascode device(M₇) in the common source LNA of FIG. 4e was varied in width while thewidth of the lower device (M₈) remained constant and the circuit wassimulated to determine the NF (Noise Figure) and the Gain of the commonsource LNA. The dashed and solid lines in all of FIGS. 5a-d correspondto two different ratios of the width of the upper device (M7) to thewidth of the lower device (M8) or W_(M7)/W_(M8). These two ratios havebeen reduced to a common denominator of 8. The ratio W_(M7)/W_(M8) ofthe dashed line is 6/8 while that of the solid line corresponds to aratio of 5/8.

FIG. 5a provides the NF at (WCS) Worst Case Slow Case (longer channellengths, low power supply voltage and high temperature). The dotted lineshows a minimum in the NF at about 68 GHz while the solid line shiftsthe minimum towards 63 GHz. Thus, as the upper device is reduced to aratio of 5/8, the NF is reduced by 0.16 dB at 60 GHz when compared tothe initial ratio of 6/8. FIG. 5b provides the NF results for the (BCF)Best Case Fast Case (shorter channel lengths, high power supply voltageand low temperature).

FIG. 5c provides the S21 or forward transmission coefficient (forwardgain) at WCS. Note that the peak of the solid curve corresponding to aratio of 5/8 is shifted to the left, decreasing the center frequency. At60 GHz, the forward gain is increased by 3 dB. FIG. 5d provides the S21results for the BCF case. Thus, for the common source LNA of FIG. 4e ,assuming that the capacitive array of C₄ and C₅ is removed, the ratio ofW_(M7)/W_(M8) was set to 5/8. Ideally, to achieve good linearity in theLNA requires that the upper device of the cascode have a width largerthan the lower device. The upper device would introduce a smallervoltage drop and increase the available swing of the signal; however,the curves of FIG. 5a-d would then shift to the right increasing the NFand the center carrier frequency outside the desired range. The 1 dbcompression point is monitored to arrive at a design with an acceptable1 db compression point where the NF is reduced, the gain is increased at60 GHz and the bandwidth is shifted to lower frequencies.

A Gilbert mixer is illustrated in FIG. 6a comprising of the two devicesM_(g1) and M_(g2) which are switched by the rf_(in) and rf_(in) signals,respectively. The drain of device M_(g1) is coupled to the common node6-1 of the first mixer switch gated by the in-phase clock (Θ_(I) and itscompliment). The drain of device M_(g2) is coupled to the common node6-2 of the second mixer switch gated by the in-phase clock (Θ_(I) andits compliment). The outputs of the first mixer switch are combined withthe outputs of the second mixer switch as illustrated to generate theif_(Iout′) signal. A load attached to each of the two outputs couplesthe Gilbert mixer to a power supply to supply energy to the circuit. Theintermediate frequency contains the sum and difference frequencyspectrum between the output signal spectrum carried by the rf_(in) andrf_(in) and the in-phase clock (Θ₁ and its compliment). Note that theenergy carried by the output signal spectrum is only applied to thegates of M_(g1) and M_(g2) and this energy does not directly contributeto powering or providing energy to operate the mixer. If this energycould power the mixer, the energy usage of the mixer can potentially beminimized. A similar circuit is used to generate the if_(Qout′) signalexcept that the mixer switches are clocked by the quadrature clock(Θ_(Q) and its compliment). A quadrature clock is shifted 90° degreesfrom the in-phase clock.

FIG. 6b illustrates a block diagram of one embodiment of the invention.A quadrature oscillator generates four equally displaced clock phases:Θ_(I), Θ _(I), Θ_(Q) and Θ _(Q) at 0°, 180°, 90° and 270°, respectively.The clocks Θ_(I) and Θ _(I) are the in-phase and inverse in-phase clockswhile the Θ_(Q) and Θ _(Q) are known as the quadrature and inversequadrature clocks. The load on each of these clock nodes is identicalinsuring that the clock output is evenly loaded, thereby preventing anyskew between these clock signals from developing. The LNA outputs areapplied to common nodes 6-3 and 6-4 of the upper and lower mixerswitches. The LNA feeds the amplified signal from a source through theLNA to the coupling capacitor C_(coup). The capacitor C_(coup) couplesthe output signal of the LNA to the common nodes 6-3 and 6-4 of the twomixer switches. Since the upper mixer switch is clocked by the in-phaseclocks, only the in-phase current component I_(I) is converted intoif_(Iout) and since the lower mixer switch is clocked by thequadrature-phase clocks, only the quadrature-phase current componentI_(Q) is converted into if_(Qout).

FIG. 7a depicts the device configuration for the block diagram given inFIG. 6b . The top mixer switch of FIG. 6b is on the left side of FIG. 7aand comprises MOS devices M₂₄ and M₂₅ connected to the common node 6-3while the lower mixer of FIG. 6b is on the right side of FIG. 7acomprises MOS devices M₂₆ and M₂₇ connected to the common node 6-4. Avoltage divider is formed by resistors R₁₅ and R₁₆ and is coupledthrough a large value resistor R₁₇ to provide DC biasing for the commonnodes 6-3 and 6-4 of the left and right mixer switches and to the commonplate electrode of the coupling capacitor C_(coup).

The output of the LNA is coupled to a coupling capacitor C_(coup). Thecoupling capacitor applies the average currents I_(I) and I_(Q) to thecommon nodes of the left 6-3 and right 6-4 mixer switches, respectively.Note that instead of applying the output signal of the LNA to the gatedevices of the Gilbert mixer, for example see M_(g1) or M_(g2) in FIG.6a , the signal is instead applied to the common nodes 6-3 and 6-4 ofthe left and right mixer switches as illustrated in FIG. 7a . Unlike theGilbert mixer, this embodiment of mixer switches is driven by theaverage AC current output of the LNA to power the inventive mixer. Themixer switch M₂₅ clocked by the one of the quadrature clocks and theload capacitance of the mixer switch M₂₅ is the gate capacitance of M₂₃which together form a switched capacitor circuit. The switched capacitorpresents a load resistive to the resonant circuit of the LNA accordingto R_(L)=1/((C_(M23))(f_(Θ))) where R_(L) is the load resistance placedin parallel to the resonant circuit, C_(M23) is the capacitance of theload device M₂₃ and f_(Θ) is the frequency of the quadrature clock. Thisresistance R_(L) can be used to de-Q's or increase the bandwidth of thetank circuit in the LNA.

The signal of interest exists over a given range of frequencies and theinformation carried by the input signal is embedded within the signalspectrum. The left mixer comprises devices M₂₁-M₂₅ and M_(b5) andresistors R₁₁ and R₁₂. The mixer switches M₂₅ and M₂₄ are enabled anddisabled by two of the quadrature clock signals Θ_(I) and Θ _(I). Amixer switch is equivalent to a switched capacitor circuit where theswitch is driven by the clock signal to charge and discharge the gatecapacitance (M₂₂, M₂₃) of the differential amplifier with remainingcomponents M₂₁, R₁₁ and R₁₂. The average current I_(I)charges/discharges the gate capacitance of M₂₂ and M₂₃ whenever theclock signals Θ _(I) and Θ _(I) enable the mixer switch gates M₂₅ andM₂₄. The gate capacitance of M₂₂ and M₂₃ integrate the current I_(I) togenerate a first and a second voltage applied to the differentialamplifier. The differential amplifier requires two signals: an inputsignal and a compliment (or inverse) input signal and generates anoutput signal and a compliment output signal. In addition, the impedanceof the switched capacitance circuit of the mixer is used to de-Q theresonant circuit, thereby achieving a broader bandwidth with acceptablegain. As the resistance of the resonant circuit decreases, the Qdecreases and the bandwidth increases. The device M_(b5) and M₂₁ from acurrent mirror controlled by I_(b1) that feeds current into thedifferential amplifier comprising M₂₁, M₂₂, M₂₃, R₁₁ and R₁₂ whichamplifies the output of the I_(I) signal mixed by Θ_(I) and Θ _(I) togenerate the if_(Iout) outputs. The outputs of if_(Iout) are extractedjust above these two resistors R₁₁ and R₁₂.

Similarly, the right mixer comprises devices M₂₆-M₃₀ and M_(b6) andresistors R₁₃ and R₁₄. The mixer switches M₂₆ and M₂₇ are enabled anddisabled by two of the quadrature clock signals Θ_(Q) and Θ _(Q). Thecurrent I_(Q) charges/discharges the gate capacitance of M₂₉ and M₃₀whenever the clock signals Θ_(Q) and Θ _(Q) enables the gates M₂₆ andM₂₇. The device M_(b6) and M₂₈ from a current mirror controlled byI_(b2) that feeds current into the differential amplifier comprisingM₂₈, M₂₉, M₃₀, R₁₃ and R₁₄ which amplifies the output of the I_(Q)signal mixed by Θ_(Q) and Θ _(Q) to generate the if_(Qout) outputs. Theoutputs of if_(Qout) are extracted just above these two resistors R₁₃and R₁₄.

FIG. 7b provides the measured result of the common source LNA and theswitched capacitor driven mixer. The measured maximum gain of the frontend of the WiGig receiver suffices the required specifications. Insteadof using the constant parasitic capacitive load in the simulation modelsfor the results provided in FIGS. 5a-d , the measured results providedin FIG. 7b corresponds to the dynamic parasitic capacitive load of themixer being mixed with the local quadrature oscillators. In particular,note that within the range of allowed bandwidth (57-64 GHz), the gain ofthe front end remains within 3.2 dB of the maximum gain at 63 GHz.

FIG. 8a presents the top die view of the layout of the common sourceLNA, the inductors and the mixer. Referring to FIG. 4a , the source ofthe input signal (in₅) arrives at the top on metal 8 layer. The metal 8layer is patterned into a spiral inductor L₁₄. At the end of inductorL₁₄ a via connects to a metal 7 layer. The metal 7 layer couples to avia stack and provides the signal to the gate of device M₈. The drain ofdevice M₈ is couple through another via stack to the metal 8 layerforming L₁₃. The other end of L₁₃ is coupled to VSS. Note that there ismutual magnetic coupling between the inductors L₁₄ and L₁₃. The peakinginductor L₁₆ formed in the metal 8 layer couples and band pass filtersthe signal at the drain of M₈ to the source of M₇. The gate of M₇ iscoupled to VDD (not shown) while the drain couples to the inductor L₁₅formed in the metal 8 layer. The other end of L₁₅ is coupled to a via tothe metal 7 layer and connects to VDD. The drain of M₇ is also coupledto one plate of the coupling capacitor C_(coup) formed in the metal 8layer. Beneath this metal 8 layer is a metal 7 layer forming the lowerplate of the coupling capacitor C_(coup) and the lower plate is coupledto the two mixers as shown in FIG. 7a . The view along the cut A-A′ ispresented in FIG. 8b . The top metal 8 layer forms one plate of thecapacitor and is separated by oxide from the lower metal 7 layer formingthe other plate of the capacitor C_(coup).

FIG. 8c illustrates a cross-sectional view of a via stack within a diewith eight metal layers. A via stack also known as a stacked via,stacked plug, or stacked contact is illustrated in FIG. 8c . The viabetween different metal layers are placed over the via of the lowerlayers to save on area. However, as one progresses from poly to metal 1to metal 2 and up to metal 8, the vias, for example 8-1 and 8-3,increase in diameter. Each via, for instance, the via 8-1 and the metal1 layer 8-2 introduce contact resistance and inductance. The via 8-3 andmetal 5 layer 8-4 also introduce contact resistance and resistance intothe path. The via stack can be tapped to introduce/extract a signalinto/out of the stack or alter the parasitics in a circuit. The tappingoccurs when a metal layer is extended from the stack and this locationis called a tap point. Typically, the top metals in a technology aresignificantly thicker than any of the lower layer metals. The dielectriclayers surround the vias and the metal segments M₂, M₃, etc. and eachone of these dielectric layers is approximately 0.5 μm thick. The metal1 through metal 7 layers are also about 0.5 μm thick while the metal 8layer can be over 1 μm thick. The height of these via stacks is about 3to 4 μm.

Finally, it is understood that the above description are onlyillustrative of the principle of the current invention. Variousalterations, improvements, and modifications will occur and are intendedto be suggested hereby, and are within the sprit and scope of theinvention. This invention may, however, be embodied in many differentforms and should not be construed as limited to the embodiments setforth herein. Rather, these embodiments are provided so that thedisclosure will be thorough and complete, and will fully convey thescope of the invention to those skilled in the arts. It is understoodthat the various embodiments of the invention, although different, arenot mutually exclusive. In accordance with these principles, thoseskilled in the art may devise numerous modifications without departingfrom the spirit and scope of the invention. Although the circuits weredescribed using CMOS, the same circuit techniques can be applied todepletion mode devices and BJT or biploar circuits, since this tecnologyallows the formation of current sources and source followers. When adevice is specified, the device can be a transistor such as an N-MOS orP-MOS. The CMOS or SOI (Silicon on Insulator) technology provides twoenhancement mode channel types: N-MOS (n-channel) and P-MOS (p-channel)devices or transistors. The via stacks can be fabricated using tungstenor copper. In addition, a network and a portable system can exchangeinformation wirelessly by using communication techniques such as TDMA(Time Division Multiple Access), FDMA (Frequency Division MultipleAccess), CDMA (Code Division Multiple Access), OFDM (OrthogonalFrequency Division Multiplexing), UWB (Ultra Wide Band), WiFi, WiGig,Bluetooth, etc. The network can comprise the phone network, IP (Internetprotocol) network, LAN (Local Area Network), ad hoc networks, localrouters and even other portable systems.

What is claimed is:
 1. A common-source Low Noise Amplifier (LNA),comprising: a first spiral inductor coupled to a source of a firsttransistor; a second spiral inductor coupled to a drain of a secondtransistor; and a third inductor connecting the first transistor to thesecond transistor.
 2. The common-source LNA of claim 1, wherein thethird inductor is configurable to enable a first capacitance to becoupled in parallel to form a bandpass filter; and the first spiralinductor is configurable to enable a second capacitance to be coupled inparallel to form a resonant circuit.
 3. The apparatus of claim 2,wherein the resonant circuit oscillates at a lower frequency than acenter frequency when a width of the second transistor is less than awidth of the first transistor.
 4. The apparatus of claim 2, wherein theresonant circuit oscillates at a higher frequency than a centerfrequency when a width of the second transistor is greater than a widthof the first transistor.
 5. The apparatus of claim 1, furthercomprising: a drain of a third transistor coupled to a gate of a fourthtransistor with a first width; a source of the third transistorconfigured to be coupled to the resonant circuit; and an oscillatorclock configured to operate at a first frequency that enables the thirdtransistor; wherein the third transistor presents a first impedance tothe resonant circuit, causing the resonant circuit to have a firstbandwidth.
 6. The apparatus of claim 5, wherein the resonant circuit hasa wider bandwidth than the first bandwidth when either a frequency ofthe oscillator clock is larger than the first frequency, a width of thefourth transistor is larger than the first width, or both are increasedsimultaneously.
 7. The apparatus of claim 5, wherein the resonantcircuit has a narrower bandwidth than the first bandwidth when either afrequency of the oscillator clock is less than the first frequency, awidth of the fourth transistor is less than the first width, or both aredecreased simultaneously.
 8. A method for making a common-source LNA,comprising: coupling a first spiral inductor to a source of a firsttransistor; coupling a second spiral inductor to a drain of a secondtransistor; and connecting a third inductor between the first transistorto the second transistor.
 9. The method of claim 8, further comprising:configuring the third inductor to enable coupling a first capacitor inparallel, thereby forming a bandpass filter; and configuring the secondspiral inductor to enable coupling a second capacitor in parallel,thereby forming a resonant circuit.
 10. The method of claim 9, whereinthe resonant circuit oscillates at a lower frequency than the centerfrequency when a width of the second transistor is less than a width ofthe first transistor.
 11. The method of claim 9, wherein the resonantcircuit oscillates at a higher frequency than the center frequency whena width of the second transistor is greater than a width of the firsttransistor.
 12. The method of claim 9, further comprising: coupling adrain of a third transistor to a gate of a fourth transistor with afirst width; coupling a source of the third transistor to the resonantcircuit; and configuring an oscillator clock to operate at a firstfrequency to enable the third transistor; and presenting a firstimpedance of the third transistor to the resonant circuit, causing theresonant circuit to have a first bandwidth.
 13. The method of claim 12,wherein the resonant circuit has a wider bandwidth than the firstbandwidth when either a frequency of the oscillator clock is larger thanthe first frequency, a width of the fourth transistor is larger than thefirst width, or both are increased simultaneously.
 14. The method ofclaim 12, wherein the resonate circuit has a narrower bandwidth than thefirst bandwidth when either a frequency of the oscillator clock is lessthan the first frequency, a width of the fourth transistor is less thanthe first width, or both are decreased simultaneously.
 15. The method ofclaim 12, wherein energy from the resonant circuit is used to charge thegate of the fourth transistor.